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Industry

Post-HBM paths diverge as Samsung stacks and SK hynix connects

Samsung Electronics and SK hynix are pursuing different approaches for the next step after high-bandwidth memory, as rising AI workloads make it hard to expand bandwidth and capacity with HBM alone. Samsung is focusing on 3D vertical stacking that places HBM on top of accelerators to reduce data-movement bottlenecks. SK hynix is standardising high-bandwidth flash with SanDisk, linking different memory tiers via UCIe to raise system capacity and efficiency.

Industry

YMTC parent CCSH prepares for Shanghai IPO after CXMT debut

CCSH, the parent of Chinese NAND flash leader Yangtze Memory Technologies Co (YMTC), is pushing ahead with a Shanghai listing, drawing attention to whether it could rewrite China’s memory chip IPO records. CCSH plans to offer 1.98 billion to 2.43 billion shares, or 10 to 12 percent of its capital after a capital increase, with a 15 percent overallotment option. It earmarked 33 billion yuan for projects, including production upgrades and R&D.

Industry

Wafer supply bottleneck drives longer-term contracts

As supply bottlenecks for AI semiconductors spread from high-bandwidth memory and substrates to silicon wafers, long-term supply agreement terms have extended to as long as 10 years from a standard 3 to 5 years. Wafer capacity expansion has stalled while advanced packaging has increased wafer consumption. Micron provided $500 million in strategic financing to GlobalWafers and signed a 10-year agreement. South Korean memory makers are also shifting toward 5-year-plus lock-in and capacity-linked contracts.