Researchers in South Korea have demonstrated a next-generation DRAM structure that can store data stably without a separate capacitor, the Electronics and Telecommunications Research Institute said on Monday. The team developed a 2T0C (2-Transistor-0-Capacitor) DRAM using oxide semiconductor thin-film transistors. It controlled defects with an N2O plasma process and optimized transistor channel ratios to suppress leakage current. The device retained data for more than 1,000 seconds and improved the memory window by about 13 times.

The National Information Society Agency said Kim Hyeong-cheol has begun his term as its 16th president after an inauguration ceremony at its Daegu headquarters. Kim said he will develop NIA into a core think tank for a governmentwide AI transformation aimed at becoming one of the world’s top three AI powers. He also pledged to lead AI transition across public services, healthcare and defence, and to fulfil its role as an AI policy centre under the AI Basic Act.