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Industry

Post-HBM paths diverge as Samsung stacks and SK hynix connects

Samsung Electronics and SK hynix are pursuing different approaches for the next step after high-bandwidth memory, as rising AI workloads make it hard to expand bandwidth and capacity with HBM alone. Samsung is focusing on 3D vertical stacking that places HBM on top of accelerators to reduce data-movement bottlenecks. SK hynix is standardising high-bandwidth flash with SanDisk, linking different memory tiers via UCIe to raise system capacity and efficiency.

Industry

HBM supply hits limits as memory race shifts from bandwidth to utilisation

Limits on expanding high-bandwidth memory are pushing the memory industry to focus on improving resource utilisation in AI servers rather than boosting bandwidth alone. With only about 50 to 60 percent of installed server memory used for computation, companies are pursuing technologies to pool and reallocate capacity, including CXL, PIM and high-bandwidth flash. Supply constraints and rising costs reinforce the shift toward a tiered memory approach combining different memory types.