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Industry

Post-HBM paths diverge as Samsung stacks and SK hynix connects

Samsung Electronics and SK hynix are pursuing different approaches for the next step after high-bandwidth memory, as rising AI workloads make it hard to expand bandwidth and capacity with HBM alone. Samsung is focusing on 3D vertical stacking that places HBM on top of accelerators to reduce data-movement bottlenecks. SK hynix is standardising high-bandwidth flash with SanDisk, linking different memory tiers via UCIe to raise system capacity and efficiency.

Industry

Data centre power architecture shifts as BBU batteries emerge as new battleground

Battery use is expanding beyond electric vehicles and energy storage systems to server racks as AI data centres push rack power density higher. Facility-level uninterruptible power supplies are seen as less able to handle rapid power swings, lifting demand for rack-level battery backup units, or BBUs, defined in open rack standards such as OCP Open Rack V3. Samsung SDI forecasts the global BBU market at $800 million this year, up more than 70 percent, while suppliers prepare new products and production.