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Industry

SK Hynix speeds up memory timeline as fab infrastructure moves ahead

SK Hynix is accelerating construction of memory-related infrastructure, with its first Yongin fab nearing completion and investment and groundbreaking dates set for additional fabs. The company plans to hold a groundbreaking ceremony in Indiana for a $3.9 billion advanced packaging plant. It has decided to invest 35.2 trillion won in Yongin’s Y2 fab and 19.1 trillion won in Cheongju’s M17. The government has also moved to speed up power-grid schedules for the Honam semiconductor cluster.

Industry

CXMT overtakes Intel in market cap on first day of listing; HBM is key bet to challenge Samsung, SK

China’s DRAM maker ChangXin Memory Technologies (CXMT) could raise its global DRAM market share to 18% by 2028, a forecast said. After listing, its shares surged 466% to close at 49 yuan, lifting its market value to 3.28 trillion yuan, larger than Intel’s. Nomura expects capacity expansion to drive share gains, but highlighted the absence of high-bandwidth memory (HBM) sales, technology gaps and potential constraints from export controls on advanced equipment and materials.

Industry

HBM4 thickness rule eased, MR-MUF and TC-NCF upgrade race enters new phase

Competition over sixth-generation high-bandwidth memory HBM4 is shifting after JEDEC eased the HBM package thickness limit to about 775 micrometers from 720. The added margin revives options to refine bump-based processes such as MR-MUF and TC-NCF, potentially delaying hybrid bonding to HBM4E or later. Supply-chain effects are emerging, including Unitest’s contract to supply SK hynix with HBM4 wafer testers worth 22.68 billion won.