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Industry

CXMT overtakes Intel in market cap on first day of listing; HBM is key bet to challenge Samsung, SK

China’s DRAM maker ChangXin Memory Technologies (CXMT) could raise its global DRAM market share to 18% by 2028, a forecast said. After listing, its shares surged 466% to close at 49 yuan, lifting its market value to 3.28 trillion yuan, larger than Intel’s. Nomura expects capacity expansion to drive share gains, but highlighted the absence of high-bandwidth memory (HBM) sales, technology gaps and potential constraints from export controls on advanced equipment and materials.

Industry

HBM4 thickness rule eased, MR-MUF and TC-NCF upgrade race enters new phase

Competition over sixth-generation high-bandwidth memory HBM4 is shifting after JEDEC eased the HBM package thickness limit to about 775 micrometers from 720. The added margin revives options to refine bump-based processes such as MR-MUF and TC-NCF, potentially delaying hybrid bonding to HBM4E or later. Supply-chain effects are emerging, including Unitest’s contract to supply SK hynix with HBM4 wafer testers worth 22.68 billion won.

Industry

Semiconductor talent shifts between Samsung and SK Hynix raise fears of weaker K-chip originality

The semiconductor industry in South Korea is seeing repeated job moves between SK Hynix and Samsung Electronics, including return moves in both directions. Industry officials warn that process know-how built over years can move with engineers even without document leaks, potentially weakening the originality of Korean semiconductor technology. A court decision rejecting a non-compete request against a former SK Hynix employee has also drawn attention to looser legal constraints.