Industry

Post-HBM paths diverge as Samsung stacks and SK hynix connects

Samsung Electronics and SK hynix are pursuing different approaches for the next step after high-bandwidth memory, as rising AI workloads make it hard to expand bandwidth and capacity with HBM alone. Samsung is focusing on 3D vertical stacking that places HBM on top of accelerators to reduce data-movement bottlenecks. SK hynix is standardising high-bandwidth flash with SanDisk, linking different memory tiers via UCIe to raise system capacity and efficiency.

Industry

Global regulation outpaces plant buildout, speeding up Korean anode materials shift

Korean anode materials makers are accelerating plans to localise synthetic graphite as a U.S. route for Chinese graphite shifts from high tariffs to tax credit eligibility requirements. With capacity expansions and long-term supply contracts largely concentrated in 2027, domestic cell makers have limited options to replace Chinese materials before then. Import prices have fallen, but U.S. 45X rules on prohibited foreign entities tighten from 2026.