Search results for FinFET
Industry
AMAT says AI chip performance hinges on data movement, solution is 3D scaling
Applied Materials says efficiency in moving data, rather than computing speed, is the main bottleneck for AI semiconductor performance and that the industry solution is 3D scaling. It described 3D scaling across logic, memory and packaging, and said capacity expansion should accompany demand. The company detailed approaches for DRAM, a shift in HBM stacking from micro-bumps to hybrid bonding, and panel interposer development, while highlighting cooperation with Samsung Electronics and SK Hynix in Korea.
Industry
Samsung Electronics\' turnkey strategy aims to reverse market share in HBM4
Samsung Electronics is moving to counter rivals in the next-generation high-bandwidth memory market by bringing base die production in-house. As HBM4 increasingly requires foundry processes on the base die, Samsung is highlighting its ability to combine design, foundry and packaging in a turnkey approach. The company has signed an MOU with AMD for primary HBM4 supply and is discussing broader cooperation with Nvidia, while challenges such as wafer warpage and low yields remain.
Industry
TSMC unveils roadmap through 2029 featuring A13, A12 and N2U processes
TSMC, the world’s largest foundry, unveiled its semiconductor process roadmap through 2029, introducing next-generation A13, A12 and N2U processes. It adjusted parts of its existing plan, pushing A16 mass production to 2027 to match key customer product schedules. The company said A13 targets a 6 percent chip area reduction while keeping design rules, and N2U aims performance and power gains. TSMC also highlighted packaging technologies including CoWoS and SoW-X.