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imec advances ferroelectric memory as potential alternative to DRAM and NAND

As memory shortages deepen at AI data centres, European semiconductor research group imec has unveiled next-generation ferroelectric memory technology that could replace DRAM and NAND flash. The work, presented at the 2026 IEEE-JSAP VLSI Technology and Circuits Symposium, centres on a low-voltage ferroelectric capacitor and a vertically stacked transistor structure using backgate modification. Imec said the research remains at proof-of-concept stage with technical challenges still to solve.