Industry
KAIST develops \'smart door\' semiconductor structure to sharply expand storage capacity
KAIST said on Thursday a research team led by electrical and electronic engineering professor Byungjin Cho (조병진) overcame limits to higher-density 3D V-NAND by applying a new material to an ultrathin semiconductor layer. The team used boron oxynitride, or BON, in the tunnelling layer to selectively control charge movement with an asymmetric energy barrier. Tests showed erase speed improved by up to 23 times, with high durability and more precise control in penta-level cell operation.
