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Applied Materials unveils two deposition systems for sub-2 nm GAA processes

Applied Materials on Monday unveiled two deposition systems tailored for sub-2 nanometre gate-all-around (GAA) transistor processes. The company said GAA transistor fabrication requires more than 500 process steps to build internal 3D structures, with many steps demanding near-atomic tolerances. One system uses selective bottom-up silicon nitride deposition to protect shallow trench isolation structures and reduce parasitic capacitance. The other controls metal gate stacks with atomic-level uniformity and integrates multiple metal deposition steps on one platform.