| Mobile Web

Samsung Electronics to adopt ASML high-NA EUV for DRAM in 2028

Samsung Electronics said on Tuesday it has joined ASML\'s large mask consortium to co-develop next-generation 12-inch photomasks and plans to introduce high-NA EUV tools into advanced DRAM manufacturing by 2028. The shift from 6-inch to 12-inch masks alongside high-NA EUV is aimed at easing stitching constraints, boosting fab productivity and lowering chip manufacturing costs. Samsung and ASML also plan to strengthen cooperation and seek further collaboration opportunities.