Industry
KAIST develops method to analyse semiconductor electron traps and defects simultaneously
KAIST and IBM developed a measurement technique to identify internal defects in semiconductors with 1,000 times greater precision, KAIST said on Thursday. The method combines Hall measurements with light and temperature conditions to calculate the amount and properties of electron traps while also measuring charge transport. The team validated the approach in silicon and then applied it to perovskite, finding trace electron traps that were difficult to detect with existing methods.
