AI & Enterprise
ETRI demonstrates next-generation DRAM architecture without capacitors
Researchers in South Korea have demonstrated a next-generation DRAM structure that can store data stably without a separate capacitor, the Electronics and Telecommunications Research Institute said on Monday. The team developed a 2T0C (2-Transistor-0-Capacitor) DRAM using oxide semiconductor thin-film transistors. It controlled defects with an N2O plasma process and optimized transistor channel ratios to suppress leakage current. The device retained data for more than 1,000 seconds and improved the memory window by about 13 times.
