Search results for zHBM
Industry
Samsung Electronics bets on zHBM by stacking memory on accelerators
Samsung Electronics is preparing a two-track strategy of conventional HBM5 and its zHBM concept as it seeks to regain leadership in high-bandwidth memory. The company is shifting to a design that stacks HBM directly on top of AI accelerators, removing the interposer that links logic and memory side-by-side. Samsung targets 230 percent higher bandwidth and 70 percent lower power than HBM4E. Commercialisation will hinge on heat management and wafer hybrid-bonding yields.
Industry
Post-HBM paths diverge as Samsung stacks and SK hynix connects
Samsung Electronics and SK hynix are pursuing different approaches for the next step after high-bandwidth memory, as rising AI workloads make it hard to expand bandwidth and capacity with HBM alone. Samsung is focusing on 3D vertical stacking that places HBM on top of accelerators to reduce data-movement bottlenecks. SK hynix is standardising high-bandwidth flash with SanDisk, linking different memory tiers via UCIe to raise system capacity and efficiency.
Industry
Samsung Electronics unveils first 400-plus-layer V10 BV-NAND
Samsung Electronics unveiled next-generation 3D memory technology aimed at supporting the spread of AI infrastructure. The company said it showed mock-ups of its next-generation 3D memory architectures, zHBM and zNAND-O, for the first time in the industry at FMS 2026 in Santa Clara, California. It also debuted a 400-plus-layer V10 BV-NAND. Samsung also presented a portfolio including HBM4E, HBM5, LPDDR5X-PIM and PM1763.