Industry
Samsung Electronics unveils first 400-plus-layer V10 BV-NAND
Samsung Electronics unveiled next-generation 3D memory technology aimed at supporting the spread of AI infrastructure. The company said it showed mock-ups of its next-generation 3D memory architectures, zHBM and zNAND-O, for the first time in the industry at FMS 2026 in Santa Clara, California. It also debuted a 400-plus-layer V10 BV-NAND. Samsung also presented a portfolio including HBM4E, HBM5, LPDDR5X-PIM and PM1763.
