AI & Enterprise
Intel unveils next-generation memory to challenge HBM in AI market
Intel has signalled a structural shift in the semiconductor memory market by promoting Z-angle Memory, or ZAM, a next-generation vertical-stacked memory designed to replace high-bandwidth memory. Intel is set to disclose the technology in an upcoming VLSI Conference paper. The company backs development while Japan-based Saimemory Corporation, a SoftBank subsidiary, leads commercialisation. ZAM is expected to compete with HBM4 intended for Nvidia’s next-generation AI platform.
