AI & Enterprise
KAIST develops structure to ease electrical bottleneck in 2D semiconductors
A South Korean research team has developed a structure that could ease an “electrical bottleneck” that reduces performance and power efficiency in next-generation semiconductors. KAIST said its team built a continuous semimetal and semiconductor structure within a single thin film of platinum diselenide and created an analysis platform to directly observe current flow. The team visualized nanoscale charge movement with atomic force microscopy and verified operation by applying an electric field.
