A Russian startup has unveiled multi-cathode electron lithography technology that uses multiple electron beams simultaneously to significantly increase semiconductor exposure speed. It aims to sharply cut exposure time compared with a single electron-beam approach, but remains at the stage of verifying core components, leaving major hurdles before commercialisation.

On Aug. 12 local time, IT outlet TechRadar reported that Russian developers said they had developed a multi-cathode electron source that generates multiple electron beams at once and had confirmed its operation. The developers claimed the technology could expose one silicon wafer in about 5 to 7 minutes. They said the same job could take 1 to 2 weeks with a conventional single electron-beam method.

Key developer Yevgeny Givargizov (예브게니 기바르기조프) said he had developed the full technology needed to make multi-cathodes and had confirmed actual operation.

The difference from existing multi-beam technologies is that it places multiple electron sources in parallel rather than splitting a beam within a single optical system. Unlike some overseas multi-path systems that divide beams using mirrors and shutters, the Russian side chose a structure that creates multiple beam-generating sources.

The developers expect this will reduce optical complexity and also cut the equipment's energy use and cost. They claimed the end radius of the multi-cathode array is at the 1.5 to 2 nanometre level, which they said is very sharp among electron sources made so far.

A complete exposure tool has not yet been built. What has been confirmed to operate is the multi-cathode electron source component, and work remains to integrate it into an actual semiconductor exposure tool.

Sergei Sazonov (세르게이 사조노프), a microelectronics expert at Russia's National Technology Initiative, said it is a promising approach if multi-cathode control can be implemented stably at scale. He added that further technical development is needed before it can be used as industrial equipment.

Engineering expert Sergei Varnavsky (세르게이 바르납스키) also assessed that what has been verified in a working form is limited to the multi-cathode component. He warned that if fundraising is delayed, the gap with competing technologies overseas could widen instead.

The development schedule also still has a long way to go. The researchers expect it will take about 3 years to build a fully working prototype. The target process range runs from the 350-nanometre class to the single-digit nanometre level. They also said photoresist performance, rather than the electron beam itself, is a key factor determining current resolution.

Ultimately, the core question is whether the technology can prove the speed it presents in an actual exposure tool. Stable multi-cathode control, equipment integration, improved photoresist performance and sustained funding all need to be addressed. At this stage, it is more appropriate to view it as research aimed at fast electron-beam exposure rather than a technology that replaces existing semiconductor exposure tools.