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Atomic substitution builds semiconductors as Korean team proves low-power device performance

A technology to selectively replace atoms in semiconductors to implement multiple electrical functions on a single thin film has been developed. The Ministry of Science and ICT said a team led by Jo Moon-ho (조문호) at the Institute for Basic Science developed a modular transistor fabrication method for 2D semiconductors. The team converted WSe2 at atomic-layer thickness and built transistors whose switching voltage approached the room-temperature limit, while also reducing energy barriers and demonstrating low-voltage operation.